for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 14 linear & power amplifiers - smt HMC406MS8G / 406ms8ge gaas ingap hbt mmic power amplifier, 5 - 6 ghz v05.1209 general description features functional diagram the HMC406MS8G(e) is a high efficiency gaas ingap heterojunction bipolar transistor (hbt) mmic power ampli er which operates between 5 and 6 ghz. the ampli er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved rf and thermal performance. with a minimum of external components, the ampli er provides 17 db of gain and +29 dbm of saturated power at 38% pae from a +5v supply voltage. vpd can be used for full power down or rf output power/ current control. gain: 17 db saturated power: +29 dbm 38% pae supply voltage: +5v power down capability low external part count electrical speci cations, t a = +25 c, vs = 5v, vpd = 5v typical applications the HMC406MS8G(e) is ideal for: ? wimax & wilan ? dsrc ? military & maritime ? private mobile radio ? unii & ism parameter min. typ. max. min. typ. max. units frequency range 5 - 6 5.7 - 5.9 ghz gain 13 16 21 14 17 21 db gain variation over temperature 0.03 0.04 0.03 0.04 db/ c input return loss 10 11 db output return loss 8 9 db output power for 1 db compression (p1db) 21 24 24 27 dbm saturated output power (psat) 27 29 dbm output third order intercept (ip3) 34 38 34 38 dbm noise figure 6.0 6.0 db supply current (icq) vpd = 0v/5v 0.002 / 300 0.002 / 300 ma control current (ipd) vpd = 5v 7 7 ma switching speed ton, toff 35 35 ns
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 15 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 345678 s21 s11 s22 response (db) frequency (ghz) 14 18 22 26 30 34 4.5 5 5.5 6 6.5 +25 c +85 c -40 c psat (dbm) frequency (ghz) 14 18 22 26 30 34 4.5 5 5.5 6 6.5 +25 c +85 c -40 c p1db (dbm) frequency (ghz) -15 -10 -5 0 4.5 5 5.5 6 6.5 +25 c +85 c -40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 4.5 5 5.5 6 6.5 +25 c +85 c -40 c return loss (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 4.5 5 5.5 6 6.5 +25 c +85 c -40 c gain (db) frequency (ghz) HMC406MS8G / 406ms8ge v05.1209 gaas ingap hbt mmic power amplifier, 5 - 6 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 16 linear & power amplifiers - smt power compression @ 5.8 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage reverse isolation vs. temperature gain, power & quiescent supply current vs. vpd @ 5.8 ghz 14 15 16 17 18 19 20 21 22 23 24 22 23 24 25 26 27 28 29 30 31 32 4.75 5 5.25 gain p1db psat gain db) () vcc supply voltage (v) 0 1 2 3 4 5 6 7 8 9 10 4.5 5 5.5 6 6.5 +25 c +85 c -40 c noise figure (db) frequency (ghz) 3 6 9 12 15 18 21 24 27 30 33 0 35 70 105 140 175 210 245 280 315 350 2.5 3 3.5 4 4.5 5 gain p1db psat icq gain (db), p1db (dbm), psat (dbm) icq (ma) vpd (v) -60 -50 -40 -30 -20 -10 0 4.5 5 5.5 6 6.5 reverse isolation power down isolation isolation (db) frequency (ghz) 14 19 24 29 34 39 44 4.5 5 5.5 6 6.5 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 0 6 12 18 24 30 36 42 02468101214161 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) HMC406MS8G / 406ms8ge v05.1209 gaas ingap hbt mmic power amplifier, 5 - 6 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 17 outline drawing absolute maximum ratings collector bias voltage (vcc) +5.5v control voltage (vpd) +5.5v rf input power (rfin)(vs = vpd = +5v) +20 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 32 mw/c above 85 c) 2.1 w thermal resistance (junction to ground paddle) 31 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. part number package body material lead finish msl rating package marking [3] HMC406MS8G low stress injection molded plastic sn/pb solder msl1 [1] h406 xxxx HMC406MS8Ge rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h406 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information electrostatic sensitive device observe handling precautions HMC406MS8G / 406ms8ge v05.1209 gaas ingap hbt mmic power amplifier, 5 - 6 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 18 linear & power amplifiers - smt pin descriptions pin number function description interface schematic 1vpd power control pin. for maximum power, this pin should be connected to 5v. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. 2, 4, 7 gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. 3rfin this pin is ac coupled and matched to 50 ohms. 5, 6 rfout rf output and bias for the output stage. the power supply for the output device needs to be supplied to these pins. 8vcc power supply voltage for the rst ampli er stage. an external bypass capacitor of 330 pf is required. this capacitor should be placed as close to the devices as possible. application circuit note 1: c3 should be located < 0.020 from pin 8 (vcc) note 2: c2 should be located < 0.020 from l1. tl1 tl2 tl3 impedance 50 ohm 50 ohm 50 ohm length 0.038 0.231 0.1 HMC406MS8G / 406ms8ge v05.1209 gaas ingap hbt mmic power amplifier, 5 - 6 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 19 evaluation pcb the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 104989 [1] item description j1 - j2 pcb mount sma rf connector j3 2mm dc header c1 - c3 330 pf capacitor, 0603 pkg. c4 2.2 f capacitor, tantalum c5 0.6 pf capacitor, 0603 pkg. c6 1.6 pf capacitor, 0603 pkg. c7 100 pf capacitor, 0603 pkg. l1 3.9 nh inductor, 0603 pkg. u1 HMC406MS8G(e) ampli er pcb [2] 105021 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: roger 4350 HMC406MS8G / 406ms8ge v05.1209 gaas ingap hbt mmic power amplifier, 5 - 6 ghz
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